Excited-state dynamics and carrier capture in InGaAs/GaAs quantum dots
Identifieur interne : 00FC24 ( Main/Repository ); précédent : 00FC23; suivant : 00FC25Excited-state dynamics and carrier capture in InGaAs/GaAs quantum dots
Auteurs : RBID : Pascal:01-0459750Descripteurs français
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- 7321L, 8105E, 7867H, 8107T, 7155E, 7855C, 7363K, 7847, 7220J, 7320M, Etude expérimentale, Indium composé, Gallium arséniure, Semiconducteur III-V, Point quantique semiconducteur, Photoluminescence, Spectre résolution temporelle, Piège électron, Piège trou, Etat excité, Exciton, Temps relaxation porteur charge.
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Abstract
Subpicosecond time-resolved photoluminescence upconversion is used to measure the 12 K first-excited-state dynamics in large InGaAs/GaAs self-assembled quantum dots designed for 1.3 μm diode lasers. A comparison with the ground-state dynamics suggests that energy relaxation occurs in a cascade through the multiple discrete levels with an average interlevel relaxation time of ∼250 fs. Excited-state emission is observed from two distinct populations. Due to the ultrafast relaxation from the excited state to the ground state in dots containing only a single exciton, the excited-state emission is dominated by the fraction of dots that capture more than one electron-hole pair. In this case, state filling in the ground state blocks the ultrafast relaxation channel, thereby enhancing the excited-state emission. While state filling and a random capture process dictate the primary features of the excited-state emission, at low excitation levels we find that the rise time of emission from the excited state is influenced by the much denser population of singly occupied dots. © 2001 American Institute of Physics.
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Boggess</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Optical Science and Technology Center, Department of Physics and Astronomy, The University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Optical Science and Technology Center, Department of Physics and Astronomy, The University of Iowa, Iowa City</wicri:cityArea></affiliation></author><author><name sortKey="Gundogdu, K" uniqKey="Gundogdu K">K. Gundogdu</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Optical Science and Technology Center, Department of Physics and Astronomy, The University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Optical Science and Technology Center, Department of Physics and Astronomy, The University of Iowa, Iowa City</wicri:cityArea></affiliation></author><author><name sortKey="Flatte, Michael E" uniqKey="Flatte M">Michael E. Flatte</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Optical Science and Technology Center, Department of Physics and Astronomy, The University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Optical Science and Technology Center, Department of Physics and Astronomy, The University of Iowa, Iowa City</wicri:cityArea></affiliation></author><author><name sortKey="Deppe, D G" uniqKey="Deppe D">D. G. Deppe</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Texas 78712-1084</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin</wicri:cityArea><orgName type="university">Université du Texas à Austin</orgName></affiliation></author><author><name sortKey="Cao, C" uniqKey="Cao C">C. Cao</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Texas 78712-1084</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin</wicri:cityArea><orgName type="university">Université du Texas à Austin</orgName></affiliation></author><author><name sortKey="Shchekin, O B" uniqKey="Shchekin O">O. B. Shchekin</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Texas 78712-1084</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin</wicri:cityArea><orgName type="university">Université du Texas à Austin</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0459750</idno><date when="2001-11-12">2001-11-12</date><idno type="stanalyst">PASCAL 01-0459750 AIP</idno><idno type="RBID">Pascal:01-0459750</idno><idno type="wicri:Area/Main/Corpus">010493</idno><idno type="wicri:Area/Main/Repository">00FC24</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier relaxation time</term><term>Electron traps</term><term>Excited states</term><term>Excitons</term><term>Experimental study</term><term>Gallium arsenides</term><term>Hole traps</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Photoluminescence</term><term>Semiconductor quantum dots</term><term>Time resolved spectra</term><term>self-assembly</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7321L</term><term>8105E</term><term>7867H</term><term>8107T</term><term>7155E</term><term>7855C</term><term>7363K</term><term>7847</term><term>7220J</term><term>7320M</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Photoluminescence</term><term>Spectre résolution temporelle</term><term>Piège électron</term><term>Piège trou</term><term>Etat excité</term><term>Exciton</term><term>Temps relaxation porteur charge</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Subpicosecond time-resolved photoluminescence upconversion is used to measure the 12 K first-excited-state dynamics in large InGaAs/GaAs self-assembled quantum dots designed for 1.3 μm diode lasers. A comparison with the ground-state dynamics suggests that energy relaxation occurs in a cascade through the multiple discrete levels with an average interlevel relaxation time of ∼250 fs. Excited-state emission is observed from two distinct populations. Due to the ultrafast relaxation from the excited state to the ground state in dots containing only a single exciton, the excited-state emission is dominated by the fraction of dots that capture more than one electron-hole pair. In this case, state filling in the ground state blocks the ultrafast relaxation channel, thereby enhancing the excited-state emission. While state filling and a random capture process dictate the primary features of the excited-state emission, at low excitation levels we find that the rise time of emission from the excited state is influenced by the much denser population of singly occupied dots. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>79</s2></fA05><fA06><s2>20</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Excited-state dynamics and carrier capture in InGaAs/GaAs quantum dots</s1></fA08><fA11 i1="01" i2="1"><s1>ZHANG (L.)</s1></fA11><fA11 i1="02" i2="1"><s1>BOGGESS (Thomas F.)</s1></fA11><fA11 i1="03" i2="1"><s1>GUNDOGDU (K.)</s1></fA11><fA11 i1="04" i2="1"><s1>FLATTE (Michael E.)</s1></fA11><fA11 i1="05" i2="1"><s1>DEPPE (D. G.)</s1></fA11><fA11 i1="06" i2="1"><s1>CAO (C.)</s1></fA11><fA11 i1="07" i2="1"><s1>SHCHEKIN (O. B.)</s1></fA11><fA14 i1="01"><s1>Optical Science and Technology Center, Department of Physics and Astronomy, The University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Texas 78712-1084</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>3320-3322</s1></fA20><fA21><s1>2001-11-12</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0459750</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Subpicosecond time-resolved photoluminescence upconversion is used to measure the 12 K first-excited-state dynamics in large InGaAs/GaAs self-assembled quantum dots designed for 1.3 μm diode lasers. A comparison with the ground-state dynamics suggests that energy relaxation occurs in a cascade through the multiple discrete levels with an average interlevel relaxation time of ∼250 fs. Excited-state emission is observed from two distinct populations. Due to the ultrafast relaxation from the excited state to the ground state in dots containing only a single exciton, the excited-state emission is dominated by the fraction of dots that capture more than one electron-hole pair. 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